JPH0337741B2 - - Google Patents

Info

Publication number
JPH0337741B2
JPH0337741B2 JP56168090A JP16809081A JPH0337741B2 JP H0337741 B2 JPH0337741 B2 JP H0337741B2 JP 56168090 A JP56168090 A JP 56168090A JP 16809081 A JP16809081 A JP 16809081A JP H0337741 B2 JPH0337741 B2 JP H0337741B2
Authority
JP
Japan
Prior art keywords
photoelectric conversion
signal
amplification means
conversion element
signal amplification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56168090A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5868966A (ja
Inventor
Katsunori Hatanaka
Shunichi Uzawa
Yutaka Hirai
Naoki Ayada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56168090A priority Critical patent/JPS5868966A/ja
Publication of JPS5868966A publication Critical patent/JPS5868966A/ja
Publication of JPH0337741B2 publication Critical patent/JPH0337741B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
JP56168090A 1981-10-21 1981-10-21 固体光電変換装置 Granted JPS5868966A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56168090A JPS5868966A (ja) 1981-10-21 1981-10-21 固体光電変換装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56168090A JPS5868966A (ja) 1981-10-21 1981-10-21 固体光電変換装置

Publications (2)

Publication Number Publication Date
JPS5868966A JPS5868966A (ja) 1983-04-25
JPH0337741B2 true JPH0337741B2 (en]) 1991-06-06

Family

ID=15861654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56168090A Granted JPS5868966A (ja) 1981-10-21 1981-10-21 固体光電変換装置

Country Status (1)

Country Link
JP (1) JPS5868966A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2638286B1 (fr) * 1988-10-25 1990-12-07 Thomson Csf Dispositif photosensible du type a amplification du signal au niveau des points photosensibles

Also Published As

Publication number Publication date
JPS5868966A (ja) 1983-04-25

Similar Documents

Publication Publication Date Title
US4390791A (en) Solid-state photoelectric transducer
US4461956A (en) Solid-state photoelectric converter
EP0942593A2 (en) Solid state image pickup apparatus
US4517733A (en) Process for fabricating thin film image pick-up element
JPH03231560A (ja) 光電変換装置
JPH06204445A (ja) 光センサ及びそれを有する画像情報処理装置
US4148051A (en) Solid-state imaging device
US4714836A (en) Photosensitive pixel with exposed blocking element
US4495409A (en) Photosensor with diode array
US4819082A (en) Manuscript reading device
JPH022304B2 (en])
US6583456B2 (en) Image sensor with light receiving elements of differing areas and image reader both having semiconductor device
US4365274A (en) One-dimensional image sensor
US4876585A (en) Contact type image sensor with separate charge transfer device
US4788445A (en) Long array photoelectric converting apparatus with insulated matrix wiring
US5040041A (en) Semiconductor device and signal processing device having said device provided therein
JP3135309B2 (ja) 光電変換装置及び情報処理装置
JPH022301B2 (en])
US4746804A (en) Photosensitive pixel with exposed blocking element
JPH0337744B2 (en])
JPH0337743B2 (en])
JPH022302B2 (en])
JPH0337741B2 (en])
JPH022303B2 (en])
JPH022300B2 (en])